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1 mrf581 mrf5812r1, r2 motorola rf device data the rf line
! designed for high current low power amplifiers up to 1.0 ghz. ? low noise (2.0 db @ 500 mhz) ? low intermodulation distortion ? high gain ? stateoftheart technology fine line geometry arsenic emitters gold top metallization nichrome thinfilm ballasting resistors ? excellent dynamic range ? fully characterized ? high currentgain bandwidth product ? mrf5812 available in tape and reel packaging by adding suffix: r1 suffix = 500 units per reel r2 suffix = 2,500 units per reel maximum ratings rating symbol mrf581 mrf5812 unit collectoremitter voltage v ceo 18 15 vdc collectorbase voltage v cbo 36 30 vdc emitterbase voltage v ebo 2.5 vdc collector current e continuous i c 200 madc thermal resistance q jc (1) mrf581 r q jc 40 c/w thermal resistance q jc (1) mrf5812 r q jc 45 c/w total device dissipation @ t c = 75 c (1) derate above t c = 75 c mrf581 p d 1.88 25 watts mw/ c total device dissipation @ t c = 75 c (1) derate above t c = 75 c mrf5812 p d 1.67 22.2 watts mw/ c storage junction temperature range t stg 55 to +150 c maximum junction temperature t jmax 150 c device marking mrf5812 = 5812 note: 1. case temperature measured on collector lead immediately adjacent to body of package. order this document by mrf581/d semiconductor technical data i c = 200 ma low noise highfrequency transistors npn silicon case 31701, style 2 mrf581 case 75106, style 1 sorf (so8) mrf5812 ? motorola, inc. 1998 rev 9
mrf581 mrf5812r1, r2 2 motorola rf device data electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage mrf581 (i c = 1.0 madc, i b = 0) v (br)ceo 18 15 e e e e vdc collectoremitter breakdown voltage mrf5812 (i c = 5.0 madc, i b = 0) v (br)ceo 15 e e vdc collectoremitter breakdown voltage mrf5812 (i c = 5.0 madc, v be = 0) v (br)ces 30 e e vdc collectorbase breakdown voltage mrf581 (i c = 1.0 madc, i e = 0) v (br)cbo 36 30 e e e e vdc emitterbase breakdown voltage mrf581 (i e = 0.1 madc, i c = 0) mrf5812 v (br)ebo 2.5 e e vdc emitter cutoff current mrf581 (v eb = 2.0 vdc, v be = 0) i ebo e e 100 m adc collector cutoff current mrf581 (v cb = 15 vdc, i e = 0) i cbo e e 100 m adc collector cutoff current mrf5812 (v cb = 15 vdc, v be = 0, t c = 25 c) i cbo e e 0.1 madc on characteristics dc current gain (1) mrf581 (i c = 50 madc, v ce = 5.0 vdc) h fe 50 e 200 e dc current gain (1) mrf5812 (i c = 50 madc, v ce = 5.0 vdc) h fe 30 90 200 e dynamic characteristics collectorbase capacitance mrf581 (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob e 1.4 2.0 pf collectorbase capacitance mrf5812 (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb e 1.2 2.0 pf currentgain bandwidth product mrf581 (i c = 75 madc, v ce = 10 vdc, f = 1.0 ghz) f t e 5.0 e ghz currentgain e bandwidth product mrf5812 (i c = 75 madc, v ce = 10 vdc, f = 1.0 ghz) f t e 5.5 e ghz functional tests noise figure (minimum) (figure 11) mrf581 (i c = 50 madc, v ce = 10 vdc, f = 0.5 ghz) nf min e 2.0 3.0 db noise figure (minimum) (figure 11) mrf5812 (i c = 50 madc, v ce = 10 vdc, f = 0.5 ghz) nf min e 2.0 e db noise figure (50 ohm insertion) mrf5812 (i c = 50 madc, v ce = 10 vdc, f = 0.5 ghz) nf 50 w e 2.5 3.0 db power gain at optimum noise figure mrf581 (i c = 50 madc, v ce = 10 vdc, f = 0.5 ghz) g nf 13 15.5 e db insertion gain mrf5812 (i c = 50 madc, v ce = 10 vdc, f = 0.5 ghz) |s 21 | 2 13 15.5 e db maximum unilateral gain (i c = 75 madc, v ce = 10 vdc, f = 0.5 ghz) g umax (2) e 17 e db intermodulation distortion (3) (v ce = 10 v, i c = 75 ma, v out = + 50 dbmv) imd(d3) e 65 e db note: 1. 300 m s pulse on tektronix 576 or equivalent. 2. g umax = 3. 2 tones, f1 = 497 mhz, f2 = 503 mhz, 3rd order single tone reference. |s 21 | 2 (1 |s 11 | 2 )(1 |s 22 | 2 )
3 mrf581 mrf5812r1, r2 motorola rf device data figure 1. c ib input capacitance versus voltage figure 2. c cb , c ob collectorbase capacitance versus voltage 3 2 1 0 v eb , emitterbase voltage (volts) f = 1 mhz c, capacitance (pf) 10 8 6 4 2 0 c ib 2 0 v cb , collectorbase voltage (volts) c, capacitance (pf) 5 4 2 0 3 1 46810 c ob c cb f = 1 mhz figure 3. gainbandwidth product versus collector current figure 4. 3rd order intercept point f , gain-bandwidth product (ghz) t 02040 8 6 4 2 0 60 80 100 v ce = 10 vdc f = 1 ghz 120 140 i c , collector current (ma) p , output power (dbm) out 40 p in , input power (dbm) 30 20 10 0 10 40 30 20 10 (3rd order intercept) 01020 f 1 = 500 mhz f 2 = 500.3 mhz v ce = 10 v i c = 75 ma p out (1 db) 20 30 p in p out + 35 dbm ip 3 typical characteristics mrf581
mrf581 mrf5812r1, r2 4 motorola rf device data typical characteristics mrf581 figure 5. g umax e maximum unilateral gain, |s 21 | 2 versus frequency figure 6. g amax , maximum available gain versus frequency figure 7. minimum noise figure and gain associated with minimum noise figure versus frequency figure 8. noise figure versus collector current f = 500 mhz figure 9. noise figure versus collector current figure 10. noise figure and gain associated with noise figure versus collector current 25 0.2 0.1 f, frequency (ghz) 20 15 gain (db) |s 21 | 2 g umax v ce = 10 v i c = 75 ma g umax = |s 21 | 2 (1 |s 11 | 2 )(1 |s 22 | 2 ) 10 5 0 0.3 0.5 0.7 1 2 3 5 7 10 g amax = |s 21 | |s 12 | (k k 2 1 ), k 1 25 f, frequency (ghz) 20 15 gain (db) 10 5 0 0.3 0.5 0.7 1 2 3 v ce = 10 v i c = 75 ma 25 0.2 0.1 f, frequency (ghz) 20 15 10 5 0 0.3 0.5 0.7 1 g nf , gain associated with noise figure (db) nf, noise figure (db) 3 2 1 0 g nf mrf581 mrf581 v ce = 10 v i c = 50 ma 25 0 i c , collector current (ma) 50 75 100 125 nf, noise figure (db) 3 2 1 0 4 5 g s = g l = 0 z o = 50 w 4 mrf581 v ce = 10 vdc i c , collector current (ma) nf, noise figure (db) 3 2 1 25 0 i c , collector current (ma) 50 75 100 125 nf, noise figure (db) 3 2 1 0 4 5 4 25 0 50 75 100 125 0 5 g s = g l = 0 z o = 50 w g s = g l = 0 z o = 50 w mrf581 mrf581 v ce = 10 v f = 200 mhz v ce = 10 vdc f = 50 mhz nfmin nf 50 nf 50 nf 50 g s = g opt
5 mrf581 mrf5812r1, r2 motorola rf device data figure 11. mrf581, mrf5812 functional circuit schematic figure 12. c ib input capacitance versus voltage figure 13. c cb , c ob collectorbase capacitance versus voltage typical characteristics mrf5812 *bias tee **slug tuner *bias tee **slug tuner rf output rf input *** d.u.t. **microlab/fxr ** sf11n for f < 1 ghz ** sf31n for f > 1 ghz v be v ce = 10 vdc *hp11590b bias * network ***hp11608a transistor fixture c, capacitance (pf) c, capacitance (pf) 12 10 8 6 4 2 0 3 2 1 v eb , emitterbase voltage (volts) f = 1 mhz c ib 5 2 0 0 v cb , collectorbase (volts) 4 3 1 24 6810 f = 1 mhz c ob c cb
mrf581 mrf5812r1, r2 6 motorola rf device data figure 14. minimum noise figure and gain associated with noise figure versus frequency figure 15. noise figure and insertion gain versus collector current figure 16. g umax e maximum unilateral gain, |s 21 | 2 versus frequency figure 17. g amax , maximum available gain versus frequency figure 18. gainbandwidth product versus collector current figure 19. 3rd order intercept point and 1.0 db compression point g nf , gain associated with noise figure (db) noise figure (db) 30 24 f, frequency (ghz) 0.2 0.3 18 12 6 0 0.1 0.5 0.7 1 0 1 2 3 g nf , gain associated with noise figure (db) noise figure (db) 20 16 i c , collector current (ma) 25 12 8 4 0 0 0 1 2 3 50 75 100 125 4 0.15 f, frequency (ghz) 0.3 0.5 1 2 0.7 3 gain (db) 25 20 15 10 0 5 0 f, frequency (ghz) 0.3 0.5 1 2 0.7 3 gain (db) 25 20 15 10 0 5 f , gain-bandwidth product (ghz) t i c , collector current (ma) 0 8 4 0 20 60 40 80 100 6 2 120 140 g nf v ce = 10 vdc i c = 50 ma ckt e figure 1 nf min |s 21 | 2 nf 50 w g s = g l = 0 z o = 50 w f = 500 mhz v ce = 10 vdc g umax = |s 21 | 2 (1 |s 11 | 2 )(1 |s 22 | 2 ) g umax |s 21 | 2 v ce = 10 vdc i c = 75 ma v ce = 10 vdc i c = 75 ma g amax = |s 21 | |s 12 | (k k 2 1 ), k 1 v ce = 10 vdc f = 1 ghz p , output power (dbm) out 40 p in , input power (dbm) 30 20 10 0 10 40 30 20 10 (3rd order intercept) 01020 f 1 = 500 mhz f 2 = 500.3 mhz v ce = 10 v i c = 75 ma p out (1 db) 20 30 p in p out + 35 dbm ip 3
7 mrf581 mrf5812r1, r2 motorola rf device data figure 20. mrf581 input/output reflection coefficient versus frequency figure 21. mrf581 forward/reverse transmission coefficients versus frequency v ce = 10 v i c = 50 ma + j50 + j100 + j150 + j250 + j500 j500 j250 j150 j100 j50 j25 j10 0 + j10 + j25 25 50 100 150 250 500 10 s 11 1.5 1 0.5 s 22 1 1.5 0.5 10 8 6 4 2 0.2 +90 +60 +30 0 30 60 90 120 150 180 +150 +120 0.1 s 21 s 12 s 21 s 12 0.5 1 1.5 0.5 1 1.5 f = 0.3 ghz f = 0.3 ghz f = 0.3 ghz f = 0.3 ghz v ce i c f s 11 s 21 s 12 s 22 v ce (volts) i c (ma) f (mhz) |s 11 | f |s 21 | f |s 12 | f |s 22 | f 5.0 25 300 500 1000 1500 0.69 0.72 0.73 0.76 169 176 157 139 6.57 3.95 2.10 1.47 93 82 62 50 0.06 0.07 0.12 0.17 39 47 60 61 0.34 0.29 0.27 0.33 129 142 165 172 50 300 500 1000 1500 0.70 0.72 0.72 0.76 173 173 157 138 7.14 4.27 2.24 1.61 93 82 65 53 0.05 0.07 0.13 0.18 45 53 62 61 0.38 0.34 0.33 0.37 144 157 179 173 75 300 500 1000 1500 0.70 0.72 0.72 0.76 175 172 155 138 7.26 4.33 2.28 1.64 92 82 65 53 0.05 0.07 0.13 0.19 48 55 63 61 0.40 0.37 0.30 0.39 148 161 176 170 100 300 500 1000 1500 0.70 0.72 0.72 0.75 176 172 155 137 7.30 4.34 2.28 1.64 92 82 65 53 0.05 0.07 0.13 0.19 48 56 63 61 0.40 0.37 0.36 0.39 151 163 175 168 10 25 300 500 1000 1500 0.66 0.69 0.70 0.74 165 178 159 141 7.58 4.56 2.39 1.65 95 82 64 50 0.05 0.07 0.11 0.16 40 48 61 64 0.29 0.23 0.19 0.26 106 116 141 153 50 300 500 1000 1500 0.65 0.68 0.69 0.72 169 175 157 139 8.25 4.96 2.60 1.82 94 82 65 52 0.05 0.07 0.12 0.17 46 54 63 63 0.30 0.24 0.22 0.27 126 138 164 171 75 300 500 1000 1500 0.66 0.68 0.69 0.72 171 175 157 139 8.49 5.06 2.64 1.86 93 82 65 53 0.05 0.07 0.12 0.17 48 55 64 63 0.30 0.25 0.23 0.27 132 145 170 176 100 300 500 1000 1500 0.66 0.68 0.68 0.72 172 174 157 139 8.46 5.06 2.64 1.86 93 82 65 52 0.05 0.07 0.12 0.17 49 56 64 63 0.30 0.25 0.23 0.27 134 147 172 177 15 25 300 500 1000 1500 0.65 0.67 0.68 0.72 163 179 160 141 7.96 4.82 2.51 1.73 95 82 63 49 0.05 0.06 0.11 0.16 40 48 62 65 0.28 0.21 0.17 0.24 92 98 119 137 50 300 500 1000 1500 0.64 0.66 0.67 0.71 167 177 159 141 8.76 5.37 2.75 1.91 94 82 65 51 0.0 0.06 0.11 0.16 46 54 64 64 0.26 0.20 0.16 0.22 112 122 148 157 75 300 500 1000 1500 0.64 0.66 0.69 0.70 168 176 158 140 8.93 5.34 2.78 1.93 93 82 65 51 0.05 0.06 0.11 0.16 47 55 65 64 0.25 0.20 0.16 0.22 117 128 154 162 100 300 500 1000 1500 0.64 0.66 0.67 0.70 169 176 158 140 8.91 5.33 2.78 1.93 93 82 64 51 0.05 0.06 0.11 0.16 48 56 65 64 0.25 0.19 0.16 0.21 117 129 154 160 table 1. mrf581 common emitter sparameters
mrf581 mrf5812r1, r2 8 motorola rf device data v ce i c f s 11 s 21 s 12 s 22 v ce (volts) i c (ma) f (mhz) |s 11 | f |s 21 | f |s 12 | f |s 22 | f 5.0 25 100 300 500 1000 2000 3000 0.66 0.66 0.65 0.62 0.57 0.55 123 167 178 154 109 68 18.3 7.0 4.3 2.2 1.3 1.0 118 92 81 63 39 23 0.04 0.06 0.08 0.13 0.28 0.41 43 44 52 61 57 41 0.53 0.31 0.28 0.28 0.31 0.34 79 120 133 141 148 164 50 100 300 500 1000 2000 3000 0.64 0.65 0.65 0.61 0.56 0.52 133 171 175 152 109 70 20.2 7.6 4.6 2.3 1.3 1.0 114 91 81 63 39 23 0.04 0.06 0.08 0.13 0.28 0.41 44 50 56 63 57 39 0.51 0.34 0.31 0.28 0.30 0.29 93 137 148 149 150 169 75 100 300 500 1000 2000 3000 0.64 0.66 0.64 0.61 0.54 0.52 137 173 174 151 107 69 20.8 7.7 4.7 2.4 1.4 1.1 113 91 82 65 42 24 0.04 0.06 0.08 0.14 0.30 0.42 44 52 59 64 55 37 0.50 0.35 0.32 0.30 0.27 0.25 99 142 154 164 167 172 100 100 300 500 1000 2000 3000 0.64 0.65 0.64 0.61 0.54 0.52 140 174 173 151 107 65 20.8 7.6 4.7 2.4 1.4 1.1 112 90 81 65 42 24 0.03 0.06 0.08 0.15 0.30 0.42 44 53 60 64 54 37 0.50 0.36 0.33 0.31 0.27 0.25 103 145 156 166 169 174 10 25 100 300 500 1000 2000 3000 0.65 0.63 0.62 0.60 0.55 0.55 112 162 178 157 112 69 20.2 8.0 5.0 2.5 1.4 1.0 121 93 82 63 39 23 0.04 0.05 0.07 0.11 0.25 0.39 46 46 52 63 61 47 0.56 0.29 0.25 0.26 0.35 0.40 62 93 102 112 125 145 50 100 300 500 1000 2000 3000 0.63 0.62 0.60 0.58 0.51 0.50 122 167 178 154 111 70 22.9 8.8 5.3 2.7 1.5 1.2 117 92 82 64 40 24 0.03 0.05 0.07 0.12 0.26 0.39 46 51 58 65 59 44 0.50 0.28 0.24 0.23 0.28 0.34 74 112 122 129 132 144 75 100 300 500 1000 2000 3000 0.63 0.63 0.62 0.58 0.52 0.50 126 168 177 154 111 70 23.8 9.0 5.5 2.8 1.5 1.2 116 92 82 65 41 24 0.03 0.05 0.07 0.12 0.26 0.39 45 51 58 65 58 42 0.49 0.28 0.24 0.23 0.27 0.32 80 120 130 137 135 145 100 100 300 500 1000 2000 3000 0.62 0.62 0.60 0.57 0.51 0.50 128 169 176 152 109 68 23.8 8.9 5.4 2.8 1.5 1.2 114 91 81 64 40 24 0.03 0.05 0.07 0.12 0.27 0.39 46 54 61 66 59 43 0.46 0.26 0.23 0.21 0.26 0.32 82 120 130 136 134 145 15 25 100 300 500 1000 2000 3000 0.66 0.63 0.61 0.58 0.54 0.56 106 159 177 156 110 68 21 8.5 5.2 2.6 1.4 1.0 123 94 82 62 36 22 0.03 0.05 0.06 0.11 0.23 0.37 47 46 52 64 63 49 0.57 0.30 0.26 0.28 0.39 0.46 54 77 84 96 115 137 50 100 300 500 1000 2000 3000 0.62 0.60 0.58 0.56 0.52 0.52 114 163 179 154 109 67 24 9.2 5.7 2.9 1.5 1.1 119 93 81 63 39 22 0.03 0.05 0.07 0.12 0.25 0.37 46 51 58 66 60 46 0.51 0.26 0.22 0.23 0.32 0.39 64 92 100 109 118 137 75 100 300 500 1000 2000 3000 0.62 0.59 0.58 0.56 0.50 0.52 118 165 179 154 109 67 24.6 9.4 5.7 2.9 1.5 1.1 117 92 81 63 38 22 0.03 0.05 0.07 0.12 0.25 0.37 46 53 60 66 60 46 0.48 0.24 0.21 0.22 0.31 0.38 67 96 104 111 118 136 100 100 300 500 1000 2000 3000 0.62 0.60 0.58 0.56 0.50 0.50 121 165 179 155 111 68 24.8 9.3 5.7 2.9 1.5 1.1 116 91 81 63 39 23 0.03 0.05 0.07 0.12 0.25 0.37 46 53 61 65 62 47 0.46 0.23 0.20 0.22 0.32 0.39 68 96 102 109 117 136 table 2. mrf5812 common emitter sparameters
9 mrf581 mrf5812r1, r2 motorola rf device data figure 22. mrf581 constant gain contours noise figure contours f (mhz) g ms 500 0.91 176 g ml 0.78 77 g ms nf opt 0.39 159 g a max (db) 18 rn ( w ) 10.5 nf opt 2.0 nf (50 w ) 2.5 circuit per figure 14 + j50 + j100 + j150 + j250 + j500 j500 j250 j150 j100 j50 j25 j10 0 + j10 + j25 g ms nf opt 25 50 150 250 10 100 500 18 db g ms 16 14 12 10 2.5 3.0 2.2 2.0 v ce = 10 v i c = 50 ma figure 23. mrf581 test fixture schematic c1, c4, c5, c6, c8, c9 e 1000 pf, chip capacitor c2, c3 e 1.0 10 pf, johanson capacitor c7, c10 e 10 m f, tantalum capacitor r1 e 1.0 k w res. rfc e vk200, ferroxcube fb e ferrite bead, ferroxcube, 5659065/3b board material e 0.0625 thick glass teflon e r = 2.55 tl1, tl7, tl8 e microstrip 0.162 x 0.600 tl2 e microstrip 0.162 x 1.000 tl3 e microstrip 0.162 x 0.800 tl4 e microstrip 0.162 x 0.440 tl5 e microstrip 0.120 x 0.440 tl6 e microstrip 0.120 x 1.160 tl9, tl10 e microstrip 0.025 x 4.250 r1 fb rfc rfc v bb v cc c7 c8 c9 c10 fb c6 c5 tl9 tl10 tl1 c1 tl2 tl3 tl4 tl5 tl6 tl7 c4 tl8 rf input rf output d.u.t. c2 c3
mrf581 mrf5812r1, r2 10 motorola rf device data package dimensions case 31701 issue e mrf581 notes: 1. dimension d not applicable in zone n. style 2: pin 1. collector 2. emitter 3. base 4. emitter 3 1 42 seating plane l k d a n g f c 4 pl dim min max min max inches millimeters a 4.44 5.21 0.175 0.205 c 1.90 2.54 0.075 0.100 d 0.84 0.99 0.033 0.039 f 0.20 0.30 0.080 0.012 g 0.76 1.14 0.030 0.045 k 7.24 8.13 0.285 0.320 l 10.54 11.43 0.415 0.450 n 1.65 0.065 case 75106 issue t mrf5812 style 1: pin 1. emitter 2. collector 3. collector 4. emitter 5. emitter 6. base 7. base 8. emitter seating plane 1 4 5 8 a 0.25 m cb ss 0.25 m b m h c x 45 l dim min max millimeters a 1.35 1.75 a1 0.10 0.25 b 0.35 0.49 c 0.19 0.25 d 4.80 5.00 e 1.27 bsc e 3.80 4.00 h 5.80 6.20 h 0 7 l 0.40 1.25 0.25 0.50 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. dimensions are in millimeter. 3. dimension d and e do not include mold protrusion. 4. maximum mold protrusion 0.15 per side. 5. dimension b does not include dambar protrusion. allowable dambar protrusion shall be 0.127 total in excess of the b dimension at maximum material condition. d e h a b e b a1 c a 0.10 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 0354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mrf581/d ?

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